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savantic semiconductor product specification silicon npn power transistors 2SD1407 d escription with to-220fa package high breakdown voltage low collector saturation voltage complement to type 2sb1016 applications power amplifier applications pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 100 v v ceo collector -emitter voltage open base 100 v v ebo emitter-base voltage open collector 5 v i c collector current 5 a i b base current 0.5 a p c collector power dissipation t c =25 30 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-220fa) and symbol
savantic semiconductor product specification 2 silicon npn power transistors 2SD1407 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =50ma; i b =0 100 v v cesat collector-emitter saturation voltage i c =4a; i b =0.4a 2.0 v v be base-emitter voltage i c =1a; v ce =5v 1.5 v i cbo collector cut-off current v cb =100v; i e =0 100 a i ebo emitter cut-off current v eb =5v; i c =0 1.0 ma h fe-1 dc current gain i c =1a ; v ce =5v 40 240 h fe-2 dc current gain i c =4a ; v ce =5v 20 f t transition frequency i c =1a; v ce =5v 12 mhz c ob collector output capacitance f=1mhz ; v cb =10v;i e =0 100 pf h fe-1 classifications r o y 40-80 70-140 120-240
savantic semiconductor product specification 3 silicon npn power transistors 2SD1407 package outline fig.2 outline dimensions(unindicated tolerance: 0.15 mm)
savantic semiconductor product specification 4 silicon npn power transistors 2SD1407

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